RFP2N12

RFP2N12 is an N-channel enhancement mode silicon gate power field effect transistor (MOSFET) commonly used in switching regulators, motor drivers, and relay drivers.

Technical Specifications

The RFP2N12 features the following specifications: 

• Drain to Source Voltage (Vdss): 120 V
• Continuous Drain Current (Id): 2A (at Tc = 25°C)
• Power Dissipation (Max): 25W
• Drive Voltage: 10V (for Max Rds On)
• Package Type: TO-220-3 (Through Hole)
• Applications: High-speed switching converters, motor drivers, and high-power bipolar switching transistor drivers.