2N6052 - P­DARL. 100V 12A

2N6052 is a high-performance PNP Silicon Darlington power transistor designed for general-purpose amplifier and low-frequency switching applications. It is characterized by its high DC current gain and robust TO-3 metal can package, which allows for excellent thermal dissipation in demanding industrial or consumer electronics.

Technical Specifications

The 2N6052 features the following maximum ratings and characteristics:

• Transistor Polarity: PNP Darlington.
• Collector-Emitter Voltage ( VCEO): 100V.
• Collector Current ( IC): 12A (continuous), 20A (peak).
• Power Dissipation ( PD): 150W.
• DC Current Gain ( hFE): Minimum of 750 at  IC=6A.
• Operating Temperature: -65°C to +200°C.